A1770 - Sanyo Semicon Device

A1770 2SA1770

Ordering number:ENN3578 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1770/2SC4614 High-Voltage Switching Applications Features · Adoption of MBIT process. · High breakdown voltage and large current capacity. Package Dimensions unit:mm 2064A [2SA1770/2SC4614] 2.5 1.45 6.9 1.0 4.5 1.0 0.6 1.0 0.9 1 2 3 0.5 0.45 ( ) : 2SA1770 Specifications Absolut.

Features

· Adoption of MBIT process.
· High breakdown voltage and large current capacity. Package Dimensions unit:mm 2064A [2SA1770/2SC4614] 2.5 1.45 6.9 1.0 4.5 1.0 0.6 1.0 0.9 1 2 3 0.5 0.45 ( ) : 2SA1770 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Colletor Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions 2.54 2.54 1 : Emitter 2 : Collector 3 : Base SANYO : NMP Ratings (
  –)180 (
  –)160 (
  –)6 (
  –)1.5 .