Ordering number:EN3097 Features · High breakdown voltage (VCEO≥300V). · Excellent high frequency characteristic. · Adoption of MBIT process. PNP/NPN Epitaxial Planar Silicon Transistors 2SA1710/2SC4490 High-Definition CRT Display Video Output Applications Package Dimensions unit:mm 2064 [2SA1710/2SC4490] ( ) : 2SA1710 Specifications Absolute Maximum Rati.
· High breakdown voltage (VCEO≥300V).
· Excellent high frequency characteristic.
· Adoption of MBIT process.
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1710/2SC4490
High-Definition CRT Display Video Output Applications
Package Dimensions
unit:mm 2064
[2SA1710/2SC4490]
( ) : 2SA1710
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP PC Tj
Tstg
Electrical Chara.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | A1714 |
GEC |
VHF/UHF Triode | |
2 | A1714 |
Marconi |
Planar Triode | |
3 | A1718 |
SavantIC |
2SA1718 | |
4 | A17 |
Tyco Electronics |
10 TO 1000 MHz CASCADABLE AMPLIFIER | |
5 | A170 |
Powerex Power Semiconductors |
SILICON RECTIFIER | |
6 | A1701 |
Sanyo |
2SA1701 | |
7 | A1703 |
Sanyo |
2SA1703 | |
8 | A1704 |
Sanyo Semicon Device |
2SA1704 | |
9 | A1705 |
Sanyo |
2SA1705 | |
10 | A1706 |
Sanyo |
2SA1706 | |
11 | A1707 |
Sanyo Semicon Device |
2SA1707 | |
12 | A1707 |
ON Semiconductor |
Bipolar Transistor |