The A16-2 RF amplifier is a discrete thin film hybrid design, which incorporates the use of thin film manufacturing processes for accurate performance and high reliability. This single stage bipolar transistor feedback amplifier design displays impressive performance over a broadband frequency range. An active DC biasing network is used for temperature-stabl.
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• LOW NOISE: 3.5 dB (TYP.) HIGH EFFICIENCY: 15 mA (TYP.) @ +5 Volts GOOD DYNAMIC RANGE: 102.5 dB (TYP.) in 1 MHz BW LOW VSWR: <1.5:1 (TYP.)
A16-2/ SMA16-2
V2
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Description
The A16-2 RF amplifier is a discrete thin film hybrid design, which incorporates the use of thin film manufacturing processes for accurate performance and high reliability. This single stage bipolar transistor feedback amplifier design displays impressive performance over a broadband frequency range. An active DC biasing network is used for temperature-stable performance, in addition to an RF Choke, used.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | A1601 |
NEC |
UPA1601 | |
2 | A1606 |
Sanyo Semicon Device |
2SA1606 | |
3 | A1607 |
Sanyo Semicon Device |
2SA1607 | |
4 | A1608 |
NEC |
2SA1608 | |
5 | A1608 |
Kexin |
2SA1608 | |
6 | A1615 |
NEC |
2SA1615 | |
7 | A1620 |
Toshiba |
2SA1620 | |
8 | A1624 |
Sanyo |
2SA1624 | |
9 | A1625 |
WEJ |
PNP Transistor | |
10 | A1625 |
JCST |
PNP Transistor | |
11 | A1625 |
USHA |
Transistors | |
12 | A1626 |
NEC |
2SA1626 |