Ordering number:ENN2005A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1416/2SC3646 High-Voltage Switching Applications Features · Adoption of FBET, MBIT processes. · High breakdown voltage and large current capacity. · Fast switching time. · Ultrasmall size making it easy to provide high- density, small-sized hybrid ICs. Package Dimensions unit:mm 2038.
· Adoption of FBET, MBIT processes.
· High breakdown voltage and large current capacity.
· Fast switching time.
· Ultrasmall size making it easy to provide high-
density, small-sized hybrid ICs.
Package Dimensions
unit:mm 2038A
[2SA1416/2SC3646]
4.5 1.6 1.5
1.0 2.5 4.25max
( ) : 2SA1416
Specifications
Absolute Maximum Ratings at Ta = 25˚C
0.4 0.5
3 1.5 2 3.0
1
0.75
0.4
1 : Base 2 : Collector 3 : Emitter SANYO : PCP
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse)
Symbol
VCBO VCEO VEBO
IC ICP
Collecto.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | A141 |
Philips |
Tetrode | |
2 | A14100A |
Actel |
HiRel FPGAs | |
3 | A1413 |
NEC |
PNP SILICON TRIPLE DIFFUSED TRANSISTOR | |
4 | A1415 |
Sanyo |
2SA1415 | |
5 | A1417 |
Sanyo |
2SA1417 | |
6 | A1418 |
Sanyo |
2SA1418 | |
7 | A1419 |
Sanyo |
2SA1419 | |
8 | A1402 |
Sanyo |
2SA1402 | |
9 | A1403 |
Sanyo |
2SA1403 | |
10 | A1404 |
Sanyo |
2SA1404 | |
11 | A1405 |
Sanyo |
2SA1405 | |
12 | A1406 |
Sanyo |
2SA1406 |