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Using the well consolidated high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of Power MOSFETs with outstanding performances. The strengthened layout coupled with the company’s proprietary edge termination structure, gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics. 3 2 1 TO-247 Fig.
Type STW9N150
VDSS 1500 V
RDS(on) < 2.5 Ω
■ 100% avalanche tested
■ Avalanche ruggedness
■ Gate charge minimized
■ Very low intrinsic capacitances
■ High speed switching
■ Very low on-resistance
ID Pw 8 A 320 W
Application
■ Switching applications
Description
Using the well consolidated high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of Power MOSFETs with outstanding performances. The strengthened layout coupled with the company’s proprietary edge termination structure, gives the lowest RDS(on) per area, unrivalled gate charge and switching charact.
9N150 - UTC
The UTC 9N150 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable f.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 9N100 |
Unisonic Technologies |
N-CHANNEL POWER MOSFET |
|
| 2 | 9N120-E3 |
UTC |
N-CHANNEL POWER MOSFET |
|
| 3 | 9N40 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 4 | 9N40 |
Unisonic Technologies |
N-CHANNEL POWER MOSFET |
|
| 5 | 9N50 |
UTC |
N-CHANNEL POWER MOSFET |
|
| 6 | 9N50 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 7 | 9N50C |
Fairchild Semiconductor |
FQI9N50C |
|
| 8 | 9N50K-MT |
Unisonic Technologies |
N-CHANNEL POWER MOSFET |
|
| 9 | 9N60 |
Inchange |
N-Channel MOSFET Transistor |
|
| 10 | 9N60M6 |
STMicroelectronics |
N-Channel MOSFET |
|
| 11 | 9N65 |
UTC |
N-CHANNEL POWER MOSFET |
|
| 12 | 9N65 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|