95N03L - Fairchild Semiconductor

95N03L FQB95N03L

This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies. Features • Fast switching • rDS(ON) = 0.0064Ω (Typ), V GS = 10V • rDS(ON) = 0.

Features

low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies. Features
• Fast switching
• rDS(ON) = 0.0064Ω (Typ), V GS = 10V
• rDS(ON) = 0.010Ω (Typ), VGS = 5V
• Qg (Typ) = 24nC, VGS = 5V
• Qgd (Typ) = 8nC
• CISS (Typ) = 2600pF Applications
• DC/DC converters DRAIN (FLANGE) D GATE SOURCE G TO-263AB MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Co.