VCC GND Port B (PB7..PB0) XTAL1/XTAL2/TOSC1/TOSC2 Digital supply voltage. Ground. Port B is an 8-bit bi-directional I/O port with internal pull-up resistors (selected for each bit). The Port B output buffers have symmetrical drive characteristics with both high sink and source capability. As inputs, Port B pins that are externally pulled low will source cur.
• High-performance, Low-power AVR® 8-bit Microcontroller
• Advanced RISC Architecture
– 130 Powerful Instructions
– Most Single-clock Cycle Execution
– 32 x 8 General Purpose Working Registers
– Fully Static Operation
– Up to 16 MIPS Throughput at 16 MHz
– On-chip 2-cycle Multiplier
• Nonvolatile Program and Data Memories
– 8K Bytes of In-System Self-Programmable Flash Endurance: 10,000 Write/Erase Cycles
– Optional Boot Code Section with Independent Lock Bits In-System Programming by On-chip Boot Program True Read-While-Write Operation
– 512 Bytes EEPROM Endurance: 100,000 Write/Erase Cycles .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 8L00 |
ETC |
Spartan DIP Reed Relays | |
2 | 8L00 |
Coto Technology |
Spartan DIP Reed Relays | |
3 | 8L30110 |
Renesas |
Crystal or Differential-to-LVCMOS/LVTTL Clock Buffer | |
4 | 8L30110 |
IDT |
Crystal or Differential to LVCMOS/LVTTL Clock Buffer | |
5 | 8L30205 |
IDT |
Crystal or Differential to LVCMOS/LVTTL Clock Buffer | |
6 | 8L30210 |
IDT |
Crystal or Differential to LVCMOS/LVTTL Clock Buffer | |
7 | 8LP8867220F |
EEMB |
Lithium Iron Phosphate Battery | |
8 | 8LP8867220F-2 |
EEMB |
Lithium Iron Phosphate Battery | |
9 | 8LT |
ETC |
High density connectors | |
10 | 8LT0-xxxxxx |
ETC |
High density connectors | |
11 | 8LT1-xxxxxx |
ETC |
High density connectors | |
12 | 8LT2-xxxxxx |
ETC |
High density connectors |