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8205A - RZC Microelectronics

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8205A Dual N-Channel MOSFET

The 8205Ais a dual N-channel MOS Field Effect Transistor which uses advanced trench technology to provide excellent RDS(on) , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch . FEATURES l VDS =20 V l ID =6A l Low on-state resistance Fast switching RDS(on) = 45mΩ (typ.)(VGS = 4.5V, ID = 2.0A) RDS(on) = 4.

Features

l VDS =20 V l ID =6A l Low on-state resistance Fast switching RDS(on) = 45mΩ (typ.)(VGS = 4.5V, ID = 2.0A) RDS(on) = 48mΩ (typ.)(VGS = 3.85V, ID = 2.0A) RDS(on) = 60mΩ (typ.)(VGS = 2.5V, ID = 2.0A) l Lead free product is acquired l Surface Mount Package APPLICATION l Battery protection l Load switch l Power management PACKAGE MARKING AND ORDERING INFORMATION Device Marking 8205A Device 8250A Device Package TSSOP8 Reel size Tape width 8mm Quantity 3000 units Φ180mm PIN DESCRIPTION Datasheet 2012-2-27 Page 1 of 6 8205A PIN NUM 1 2 3 4 5 6 7 8 PIN NAME D S1 S1 G1 G2 S2 S2 D PIN FUNCTIO.

The same part from a different manufacturer

Datasheet 8205A - HOTTECH 8205A

The 8205A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages.

Datasheet 8205A - ETC 8205A

N MOSFET 8205A/8205B/8205C 1. N8205A/8205B/ 8205C 、。 8205A/8205B/8205C 。 2. z z z 2.5V z VBDSB=20V z IDB .

Datasheet 8205A - HSMC 8205A

This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process. It has been optimized for powe.

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