8050C - SEMTECH

8050C NPN Transistor

ST 8050 (1.5A) NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As complementary type the PNP transistor ST 8550 is recommended. On special request, these transistors c.

Features

IC=5mA at VCE=1V, IC=100mA at VCE=1V, IC=800mA Collector Cutoff Current at VCB=35V Emitter Cutoff Current at VBE=6V Collector Saturation Voltage at IC=800mA, IB=80mA Base Saturation Voltage at IC=800mA, IB=80mA Collector Emitter Breakdown Voltage at IC=2mA Collector Base Breakdown Voltage at IC=100µA Emitter Base Breakdown Voltage at IE=100µA Base Emitter Voltage at IC=10mA, VCE=1V Gain Bandwidth Product at VCE=10V, IC=50mA Collector Base Capacitance at VCB=10V, f=1MHz Symbol 8050C 8050D hFE hFE hFE hFE ICBO IEBO VCE(sat) VBE(sat) V(BR)CEO V(BR)CBO V(BR)EBO VBE fT COB Min. 45 120 .