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INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification 7N60B ·FEATURES ·Drain Current –ID= 7.4A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.2Ω(Max) ·Avalanche Energy Specified ·Fast Switching ·Simple Drive Requirements ·DESCRITION ·Designed for high efficiency switch mode powe.
·Drain Current
–ID= 7.4A@ TC=25℃
·Drain Source Voltage-
: VDSS= 600V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 1.2Ω(Max)
·Avalanche Energy Specified
·Fast Switching
·Simple Drive Requirements
·DESCRITION
·Designed for high efficiency switch mode power supply.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
600 V
VGS Gate-Source Voltage-Continuous
±30
V
ID Drain Current-Continuous
7.4 A
IDM Drain Current-Single Plused
29.6 A
PD Total Dissipation @TC=25℃
142 W
Tj Max. Operating Junction Temperature 150 ℃
Tstg Storage Temperatu.
7N60B - IXYS Corporation
www.DataSheet4U.com HiPerFASTTM IGBT IXGA 7N60B IXGP 7N60B VCES IC25 VCE(sat) tfi = 600 V = 14 A = 2 V = 150 ns Sym.
7N60B - Fairchild Semiconductor
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 7N60 |
nELL |
N-Channel Power MOSFET |
|
| 2 | 7N60 |
UTC |
N-CHANNEL MOSFET |
|
| 3 | 7N60 |
KIA |
N-CHANNEL MOSFET |
|
| 4 | 7N60 |
INCHANGE |
N-Channel MOSFET |
|
| 5 | 7N60-CB |
UTC |
N-CHANNEL MOSFET |
|
| 6 | 7N60-F |
Unisonic Technologies |
N-CHANNEL POWER MOSFET |
|
| 7 | 7N60-M |
Unisonic Technologies |
N-CHANNEL POWER MOSFET |
|
| 8 | 7N60-Q |
Unisonic Technologies |
N-CHANNEL POWER MOSFET |
|
| 9 | 7N60-R |
Unisonic Technologies |
N-CHANNEL POWER MOSFET |
|
| 10 | 7N60-TC |
UTC |
N-CHANNEL MOSFET |
|
| 11 | 7N60A |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 12 | 7N60A |
nELL |
N-Channel Power MOSFET |
|