The UTC 7N150-E3 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. 1 FEATURES0 * RDS(ON) ≤ 3.8 Ω @ VGS=10V, ID=3.5A * Low Reverse Transfer Capacitance * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedn.
* RDS(ON) ≤ 3.8 Ω @ VGS=10V, ID=3.5A
* Low Reverse Transfer Capacitance
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
SYMBOL
Power MOSFET
TO-220F1
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
7N150L-TF1-T
7N150G-TF1-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package TO-220F1
Pin Assignment
1
2
3
G
D
S
Packing Tube
MARKING
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1 of 5
QW-R502-D272.a
7N150-E3
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°С, unles.
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1 | 7N10 |
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2 | 7N100-C |
UTC |
N-CHANNEL MOSFET | |
3 | 7N10Z |
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N-CHANNEL POWER MOSFET | |
4 | 7N120-E2 |
UTC |
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5 | 7N180M |
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6 | 7N20 |
UNISONIC TECHNOLOGIES |
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7 | 7N20 |
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8 | 7N20Z |
UNISONIC TECHNOLOGIES |
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9 | 7N270K |
ETC |
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10 | 7N270K |
JOYIN |
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11 | 7N330K |
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12 | 7N35 |
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