The 74AUP2G79-Q100 provides the dual positive-edge triggered D-type flip-flop. Information on the data input (nD) is transferred to the nQ output on the LOW-to-HIGH transition of the clock pulse (nCP). The nD input must be stable one set-up time prior to the LOW-to-HIGH clock transition for predictable operation. Schmitt trigger action at all inputs makes th.
• Automotive product qualification in accordance with AEC-Q100 (Grade 1)
• Specified from -40 °C to +85 °C and from -40 °C to +125 °C
• Wide supply voltage range from 0.8 V to 3.6 V
• High noise immunity
• Complies with JEDEC standards:
• JESD8-12 (0.8 V to 1.3 V)
• JESD8-11 (0.9 V to 1.65 V)
• JESD8-7 (1.2 V to 1.95 V)
• JESD8-5 (1.8 V to 2.7 V)
• JESD8-B (2.7 V to 3.6 V)
• ESD protection:
• MIL-STD-883, method 3015 Class 3A. Exceeds 5000 V
• HBM JESD22-A114F Class 3A. Exceeds 5000 V
• MM JESD22-A115-A exceeds 200 V (C = 200 pF, R = 0 Ω)
• Low static power consumption; ICC = 0.9 μA (maximum) .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 74AUP2G79 |
NXP Semiconductors |
Low-power dual D-type flip-flop | |
2 | 74AUP2G79 |
nexperia |
Low-power dual D-type flip-flop | |
3 | 74AUP2G00 |
NXP |
Low-power dual 2-input NAND gate | |
4 | 74AUP2G00 |
Diodes |
DUAL NAND GATE | |
5 | 74AUP2G00 |
nexperia |
Low-power dual 2-input NAND gate | |
6 | 74AUP2G00-Q100 |
nexperia |
Low-power dual 2-input NAND gate | |
7 | 74AUP2G02 |
Diodes |
DUAL NOR GATE | |
8 | 74AUP2G02 |
NXP |
Low-power Dual 2-input NOR Gate | |
9 | 74AUP2G02 |
nexperia |
Low-power dual 2-input NOR gate | |
10 | 74AUP2G04 |
NXP |
Low-power dual inverter | |
11 | 74AUP2G04 |
Diodes |
DUAL INVERTERS | |
12 | 74AUP2G04 |
nexperia |
Low-power dual inverter |