708SRAP-R-AU-01 - ETC

708SRAP-R-AU-01 AlGaInP Red LED chip

AlGaInP Red LED chip Features: (1) High luminous intensity (2) Long operation life (3) 100% probing test (4) Low driving current applications Characteristics: (1) Size Chip Size: 8 mil x 8 mil (203±25 µm x 203±25 µm) Chip Thickness: 7 mil (180±25µm ) typical Bonding Pad: 6 mil (152±10 µm) in diameter (2) Metallization: P electrode：Au pad N electrode：Au alloy.

Features

(1) High luminous intensity (2) Long operation life (3) 100% probing test (4) Low driving current applications Characteristics: (1) Size Chip Size: 8 mil x 8 mil (203±25 µm x 203±25 µm) Chip Thickness: 7 mil (180±25µm ) typical Bonding Pad: 6 mil (152±10 µm) in diameter (2) Metallization: P electrode：Au pad N electrode：Au alloy (3) Structure: Refer to drawing Type: 708SRAP-R-AU-01 1.6 0.8 unit: mil 6 78 P-electrode AlGaInP epilayers n-GaAs sub. 7 N-electrode Electro-optical characteristics: Parameter Symbol Condition Min. Typ. Max. Unit Forward voltage Vf1 If = 10uA 1.25 Vf2 If = 6.