61LV25616AL - Integrated Silicon Solution Inc

61LV25616AL 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

The ISSI IS61LV25616AL is a high-speed, 4,194,304-bit static RAM organized as 262,144 words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. When CE is HIGH (deselected), the device assumes a st.

Features

• High-speed access time: — 10, 12 ns
• CMOS low power operation
• Low stand-by power: — Less than 5 mA (typ.) CMOS stand-by
• TTL compatible interface levels
• Single 3.3V power supply
• Fully static operation: no clock or refresh required
• Three state outputs
• Data control for upper and lower bytes
• Industrial temperature available ISSI FEBRUARY 2003 ® DESCRIPTION The ISSI IS61LV25616AL is a high-speed, 4,194,304-bit static RAM organized as 262,144 words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circ.