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STB60N03L-10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMIRARY DATA TYPE STB60N03L-10 www.DataSheet4U.com s s s s s s s s V DSS 30 V R DS(on) < 0.01 Ω ID 60 A s s TYPICAL RDS(on) = 0.0085 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE HIGH CURRENT CAPABILITY 175 oC OPERATING TEMPERATUR.
rain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 o C Drain Current (pulsed) Total Dissipation at T c = 25 C Derating Factor Storage Temperature Max. Operating Junction Temperature
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Value 30 30 ± 20 60 42 240 150 1 -65 to 175 175
Unit V V V A A A W W/ o C
o o
C C
(
•) Pulse width limited by safe operating area
March 1996
1/6
STB60N03L-10
THERMAL DATA
R thj-case R thj-amb R thj-amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature For Soldering Purpose Max Max Typ 1 62.5 0.5 300
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 60N03 |
Tuofeng Semiconductor |
Power MOSFET |
|
| 2 | 60N03 |
Anachip |
N-Channel MOSFET |
|
| 3 | 60N03 |
Cmos |
N-Channel MOSFET |
|
| 4 | 60N035 |
ETC |
N-Channel Field Effect Transistor |
|
| 5 | 60N03GP |
Advanced Power Electronics |
AP60N03GP |
|
| 6 | 60N03S |
Advanced Power Electronics |
AP60N03S |
|
| 7 | 60N05 |
UTC |
N-CHANNEL POWER MOSFET |
|
| 8 | 60N05 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 9 | 60N05-16 |
INCHANGE |
N-Channel MOSFET |
|
| 10 | 60N06 |
INCHANGE |
TO-220F N-Channel MOSFET Transistor |
|
| 11 | 60N06 |
UTC |
N-CHANNEL POWER MOSFET |
|
| 12 | 60N06-14 |
INCHANGE |
N-Channel MOSFET |
|