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www.DataSheet4U.com Ordering number:ENN6126 P-Channel Silicon MOSFET 5LP02M Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed switching. · 2.5V drive. Package Dimensions unit:mm 2158 [5LP02M] 0.425 0.15 3 2.1 1.250 0 to 0.1 0.425 1 2 0.65 0.65 2.0 0.3 0.9 0.6 0.2 0.3 Specifications Absolute Maximum Ratings at.
· Low ON resistance.
· Ultrahigh-speed switching.
· 2.5V drive.
Package Dimensions
unit:mm 2158
[5LP02M]
0.425
0.15 3
2.1 1.250
0 to 0.1
0.425
1 2 0.65 0.65 2.0
0.3 0.9
0.6
0.2
0.3
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions
1 : Gate 2 : Source 3 : Drain SANYO : MCP
Ratings
–50 ±10
–0.14
–0.56 0.15 150
–55 to +150
Unit V V A A W ˚C ˚C
Ele.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 5LP02C |
Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications |
|
| 2 | 5LP02SP |
Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications |
|
| 3 | 5LP01C |
Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications |
|
| 4 | 5LP01C |
ON Semiconductor |
P-Channel Small Signal MOSFET |
|
| 5 | 5LP01M |
Sanyo Semicon Device |
ULTRAHIGH-SPEED SWITCHING APPLICATIONS |
|
| 6 | 5LP01M |
ON Semiconductor |
P-Channel Small Signal MOSFET |
|
| 7 | 5LP01N |
Sanyo Semicon Device |
P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications |
|
| 8 | 5LP01S |
Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications |
|
| 9 | 5LP01S |
ON Semiconductor |
P-Channel Small Signal MOSFET |
|
| 10 | 5LP01SP |
Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications |
|
| 11 | 5LP01SS |
ON Semiconductor |
P-Channel Small Signal MOSFET |
|
| 12 | 5LP01SS |
Sanyo Semicon Device |
P-Channel Silicon MOSFET |
|