No. 108 No. 204 No. 302 The MT5C6408, 8K x 8 SRAM, employs high-speed, low-power CMOS technology, eliminating the need for clocks or refreshing. These SRAM’s have equal access and cycle times. For flexibility in high-speed memory applications, Austin Semiconductor offers dual chip enables (CE1, CE2) and output enable (OE) capability. These enhancements can p.
MT5C6408
PIN ASSIGNMENT (Top View)
A6 A7 A12 NC Vcc WE CE2 4 3 2 1 28 27 26
A5 A4 A3 A2 A1 A0 DQ0 5 6 7 8 9 10 11 25 24 23 22 21 20 19 A8 A9 A11 OE A10 CE1 DQ7
28-Pin DIP (C) (300 MIL)
NC A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ1 DQ2 DQ3 Vss 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 Vcc WE CE2 A8 A9 A11 OE A10 CE1 DQ8 DQ7 DQ6 DQ5 DQ4
28-Pin LCC (EC)
• High Speed: 12, 15, 20, 25, 35, 45, 55, and 70ns
• Battery Backup: 2V data retention
• High-performance, low-power CMOS double-metal process
• Single +5V (+10%) Power Supply
• Easy memory expansion with CE1 and CE2
• Al.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 5C032 |
Intel Corporation |
8-MACROCELL CMOS PLD | |
2 | 5C060 |
Intel Corporation |
16-MACROCELL CMOS PLD | |
3 | 5C090 |
Intel Corporation |
24-MACROCELL CMOS PLD | |
4 | 5C121 |
Intel Corporation |
1200 GATE CHMOS H-SERIES ERASABLE PROGRAMMABLE LOGIC DEVICE | |
5 | 5CP1 |
TUNG-SOL |
High Vacuum Cathode-Ray Tube | |
6 | 5CP4 |
TUNG-SOL |
High Vacuum Cathode-Ray Tube |