Naina Semiconductor emiconductor Ltd. Thyristor – Diode Module Features • • • • Improved glass passivation for high reliability Exceptional stability at high temperatures High di/dt and dv/dt capabilities Low thermal resistance 56NTD Maximum Ratings (TA = 250C unless otherwise noted) Parameter Maximum average forward current @ TJ = 0 85 C Maximum average R.
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• Improved glass passivation for high reliability Exceptional stability at high temperatures High di/dt and dv/dt capabilities Low thermal resistance
56NTD
Maximum Ratings (TA = 250C unless otherwise noted)
Parameter Maximum average forward current @ TJ = 0 85 C Maximum average RMS forward current Maximum non-repetitive surge current @ t = 10ms Maximum I t for fusing @ t = 10ms
2
Symbol IF(AV) IF(RMS) IFSM It
2
Values 56 130 1300 8000
Units A A A As
M1 PACKAGE
2
Thermal & Mechanical Specifications (TA = 250C unless otherwise noted)
Parameter Operating junction temperature range The.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 56NT |
Naina Semiconductor |
Silicon Controlled Rectifiers | |
2 | 56NT100 |
Naina Semiconductor |
Phase Control Thyristors | |
3 | 56NT120 |
Naina Semiconductor |
Phase Control Thyristors | |
4 | 56NT160 |
Naina Semiconductor |
Phase Control Thyristors | |
5 | 56NT20 |
Naina Semiconductor |
Phase Control Thyristors | |
6 | 56NT40 |
Naina Semiconductor |
Phase Control Thyristors | |
7 | 56NT60 |
Naina Semiconductor |
Phase Control Thyristors | |
8 | 56NT80 |
Naina Semiconductor |
Phase Control Thyristors | |
9 | 56NTT |
Naina Semiconductor |
Thyristor-Thyristor | |
10 | 56N3LH5 |
STMicroelectronics |
N-channel Power MOSFET | |
11 | 56N60M2 |
STMicroelectronics |
N-channel Power MOSFET | |
12 | 56NDD |
Naina Semiconductor |
Diode-Diode |