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The UTC 50N06-Q is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors. FEATURES * RDS(ON) ≤ 27 mΩ @ VGS=10V, ID=25A.
* RDS(ON) ≤ 27 mΩ @ VGS=10V, ID=25A
* Fast switching capability
* Avalanche energy tested
* Improved dv/dt capability, high ruggedness
SYMBOL
Power MOSFET
ORDERING INFORMATION
Note:
Ordering Number
Lead Free
Halogen Free
50N06L-TN3-R
50N06G-TN3-R
Pin Assignment: G: Gate D: Drain S: Source
Package TO-252
Pin Assignment
1
2
3
G
D
S
Packing Tape Reel
MARKING
www.unisonic.com.tw Copyright © 2021 Unisonic Technologies Co., Ltd
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QW-R502-C76.a
50N06-Q
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RA.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 50N06-F |
Unisonic Technologies |
N-CHANNEL POWER MOSFET |
|
| 2 | 50N06 |
CHONGQING PINGYANG |
N-CHANNEL MOSFET |
|
| 3 | 50N06 |
ETC |
Low voltage high current power MOSFET |
|
| 4 | 50N06 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 5 | 50N06 |
UTC |
N-CHANNEL POWER MOSFET |
|
| 6 | 50N06 |
KIA |
N-CHANNEL MOSFET |
|
| 7 | 50N06 |
Tuofeng Semiconductor |
Power-Transistor |
|
| 8 | 50N06B |
CHONGQING PINGYANG |
N-CHANNEL MOSFET |
|
| 9 | 50N06F |
CHONGQING PINGYANG |
N-CHANNEL MOSFET |
|
| 10 | 50N06FI |
INCHANGE |
N-Channel MOSFET |
|
| 11 | 50N06H |
CHONGQING PINGYANG |
N-CHANNEL MOSFET |
|
| 12 | 50N02-09 |
Vishay Siliconix |
SUB50N02-09 |
|