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4N49A - TT

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4N49A Hi-Reliability Optically Coupled Isolator

Each isolator in this series consists of an infrared emi ng diode and a NPN silicon phototransistor, which are mounted in a herme cally sealed TO‐78 package. Devices are designed for military and/or harsh environments. The suffix le er “A” denotes the collector is electrically isolated from the case. The 4N22, 4N22A, 4N23, 4N23A,4N24, and 4N24A (TX, TXV) dev.

Features


 TO-78 hermetically sealed package
 High current transfer ratio
 1 kV electrical isolation
 Base contact provided for conventional transistor biasing
 TX and TXV devices processed to MIL-PRF-19500 Description: Each isolator in this series consists of an infrared emi ng diode and a NPN silicon phototransistor, which are mounted in a herme cally sealed TO‐78 package. Devices are designed for military and/or harsh environments. The suffix le er “A” denotes the collector is electrically isolated from the case. The 4N22, 4N22A, 4N23, 4N23A,4N24, and 4N24A (TX, TXV) devices are processed .

The same part from a different manufacturer

Datasheet 4N49A - Micropac Industries 4N49A

Gallium Aluminum Arsenide (GaAlAs) infrared LED and a high gain N-P-N silicon phototransistor packaged in a hermetically.

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