Each isolator in this series consists of an infrared emi ng diode and a NPN silicon phototransistor, which are mounted in a herme cally sealed TO‐78 package. Devices are designed for military and/or harsh environments. The suffix le er “A” denotes the collector is electrically isolated from the case. The 4N22, 4N22A, 4N23, 4N23A,4N24, and 4N24A (TX, TXV) dev.
TO-78 hermetically sealed package
High current transfer ratio
1 kV electrical isolation
Base contact provided for conventional transistor biasing
TX and TXV devices processed to MIL-PRF-19500
Description: Each isolator in this series consists of an infrared emi ng diode and a NPN silicon phototransistor, which are mounted in a herme cally sealed TO‐78 package. Devices are designed for military and/or harsh environments. The suffix le er “A” denotes the collector is electrically isolated from the case.
The 4N22, 4N22A, 4N23, 4N23A,4N24, and 4N24A (TX, TXV) devices are processed .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 4N48 |
Micropac Industries |
JAN/ JANTX/ JANTXV/ SINGLE CHANNEL OPTOCOUPLERS | |
2 | 4N48 |
TT |
Hi-Reliability Optically Coupled Isolator | |
3 | 4N48A |
TT |
Hi-Reliability Optically Coupled Isolator | |
4 | 4N48A |
Micropac Industries |
JAN/ JANTX/ JANTXV/ SINGLE CHANNEL OPTOCOUPLERS | |
5 | 4N48BU |
Micropac Industries |
OPTOCOUPLERS | |
6 | 4N40 |
Fairchild Semiconductor |
PHOTO SCR OPTOCOUPLERS | |
7 | 4N40 |
QT Optoelectronics |
PHOTO SCR OPTOCOUPLERS | |
8 | 4N40 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
9 | 4N40 |
Unisonic Technologies |
N-Channel Power MOSFET | |
10 | 4N45 |
HP |
High Gain Darlington Output Optocouplers | |
11 | 4N45 |
Avago |
High Gain Darlington Output Optocouplers | |
12 | 4N45 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |