4606 - Tuofeng Semiconductor

4606 Complementary High-Density MOSFET

Shenzhen Tuofeng Semiconductor Technology co., LTD 4606 Complementary High Density Trench MOSFET PRODUCT SUMMARY (N-Channel) VDSS ID RDS(on) (m-ohm) Max 30V 6.9A 28 @ VGS = 10 V,ID=6.9A 42 @ VGS = 4.5V,ID=5.0A PRODUCT SUMMARY (P-Channel) VDSS ID RDS(on) (m-ohm) Max -30V -6.0 A 50 @ VGS = -10V,ID=- 6.0A 80@VGS = -4.5V, ID=- 5.0A Absolute Maximum Ra.

Features

conductor Technology co., LTD 4606 N-Channel Electrical Characteristics(TA=25°C, unless otherwise noted) Symbol Characteristic Test Conditions Min.
• Off Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body Leakage Current
• On Characteristicsc VGS(th) Gate Threshold Voltage RDS(on) Drain-Source On-State Resistance gfs Forward Transconductance
• Dynamic Characteristics d Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance
• Switching Characteristicsd Qg Total Gate Charge Qgs Gate-Source Charg.