45P03-10 - Vishay Siliconix

45P03-10 SUD45P03-10

www.DataSheet.co.kr SUD45P03-10 Vishay Siliconix P-Channel 30-V (D-S), 150_C MOSFET PRODUCT SUMMARY VDS (V) –30 rDS(on) (W) 0.010 @ VGS = –10 V 0.018 @ VGS = –4.5 V ID (A)a –15 –12 S TO-252 G Drain Connected to Tab G D S Top View Order Number: SUD45P03-10 D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-.

Features

nd Typical Characteristics). b. Surface Mounted on FR4 Board, t v 10 sec. Document Number: 70766 S-02596—Rev. D, 21-Nov-00 www.vishay.com 2-1 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr SUD45P03-10 Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS VGS = 0 V, ID =
  –250 mA VDS = VGS, ID =
  –250 mA VDS = 0 V, VGS = "20 V VDS =
  –30 V, VGS = 0 V VDS =
  –30 V, VGS = 0 V, TJ = 125_C VDS =
  –5 V, VGS =
  –10 V VDS =
  –5 V,.