40H20AD - OuCan

40H20AD N-Channel Enhancement Mode Power MOSFET

The FQB200N04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 40V,ID =200A RDS(ON) < 2.6mΩ @ VGS=10V (Typ:2.0mΩ) ● Special process technology for high ESD capability ● High density cell design for ultra low Rdson ● Fully characterized a.

Features

● VDS = 40V,ID =200A RDS(ON) < 2.6mΩ @ VGS=10V (Typ:2.0mΩ)
● Special process technology for high ESD capability
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation Schematic diagram Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply Marking and pin assignment 100% UIS TESTED! 100% ∆Vds TESTED! TO-263-2L top view Package Marking and Ordering Information Device Marking Device Device .