_________________________________ File No. 675 OOcn5LJD Solid State Division Power Transistors 2N5954 2N6372 2N6467 40829 2N5955 2N6373 2N6468 40830 2N5956 2N6374 40831 JEDEC TO·66 H·1340 JEDECTO·66 With Integral Heat Radiator H·1470A Silicon N-P-N and P-N-P Medium-Power Transistors General·Purpose Types for Switching Applications in Military, Indu.
• 2N5954. 2N5955, 2N5956 complements to 2N6372. 2N6373, 2N6374
• Low saturation voltages
• Maximum-safe-area"of-operation curves
• Thermal-cycle ratings
• Hermetically
·sealed JEDEC TO
·66 package
• High gain at high current
RCA
·2N5954. 2N5955, 2N5956. 2N6467. and 2N646sA are multiple
·epitaxial p
·n
·p transistors. RCA
·2N6372. 2N6373, and 2N6374- are multiple
·epitaxial n
·p
·n transistors. Theyare
complements to 2N5954. 2N5955, and 2N5956. These devices differ in voltage ratings and in the currents at which the para
· meters are controlled. All are supplied in t.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 40830 |
RCA |
Power Transistors | |
2 | 4081B |
R & E International |
(4081B / 40812) CMOS AND GATES | |
3 | 40829 |
RCA |
Power Transistors | |
4 | 4082B |
R & E International |
(4081B / 40812) CMOS AND GATES | |
5 | 4082IBZ |
Renesas |
1.25A Peak Current H-Bridge FET Driver | |
6 | 40850 |
RCA |
Power Transistors | |
7 | 40851 |
RCA |
Power Transistors | |
8 | 40852 |
RCA |
Power Transistors | |
9 | 40853 |
RCA |
Power Transistors | |
10 | 40854 |
RCA |
Power Transistors | |
11 | 4085B |
R & E International |
2-input and-or-inverter gate | |
12 | 4086B |
R & E International |
2-INPUT AND-OR INVERT GATE |