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3N258 - Motorola

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3N258 SINGLE-PHASE FULL-WAVE BRIDGE

MDA200 series (3N253 thru 3N259) ® MOTOROLA MINIATURE INTEGRAL DIODE ASSEMBLIES · .. with silicon rectifier chips interconnected and encapsulated into voidless rectifier bridge circuits. • High Resistance to Shock and Vibration • High Dielectric Strength • Built·ln Printed Circuit Board Stand·Offs II • UL Recognized • ROJA = 60°C/W MAXIMUM RATINGS Rat.

Features

receded and followed by rated current and voltage, TA '" 55°C) Operating and Storage Junction Temperature Range IFSM ~ 60 (for 1 cycle) _______ Amp .TJ.T,tg -55to+'65- °c ELECTRICAL CHARACTERISTICS Characteristic Instantaneous Forward Voltage (Per Diode) {iF =3.'4 Amp, TJ =250CI Reverse Current (Per Diode) (Rated VR, TA =250 C) ,.,Symbol Typ Max Unit vF '.0 Volts IR - "A '0 MECHANICAL CHARACTERISTICS CASE: Transfer Molded Plastic POLARITV: Terminal
·designation on case Pin 1 (+) for DC output Pin 4 H for DC output Pins 2 and 3 (AC) for AC input MOUNTING POSITION: Any WEIGHT: 1.8 gr.

The same part from a different manufacturer

Datasheet 3N258 - General Semiconductor 3N258

2KBP005M THRU 2KBP10M SERIES 3N253 THRU 3N259 GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER Reverse Voltage - 50 to 100.

Datasheet 3N258 - Fairchild Semiconductor 3N258

2KBP005M/3N253 - 2KBP10M/3N259 — Bridge Rectifiers November 2010 2KBP005M/3N253 - 2KBP10M/3N259 Bridge Rectifiers Feat.

Datasheet 3N258 - Vishay 3N258

www.vishay.com 2KBPxxM, 3N25x Vishay General Semiconductor Glass Passivated Single-Phase Bridge Rectifier − ~ ~ + Cas.

Datasheet 3N258 - Digitron Semiconductors 3N258

3N253-3N259 High-reliability discrete products and engineering services since 1977 DUAL GATE MOSFET VHF AMPLIFIER FEA.

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