2SC2216(3DG2216) :。 NPN /SILICON NPN TRANSISTOR Purpose: TV final picture IF amplifier applications. :,hFE 。 Features: High gain, good hFE linearity. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO VCEO VEBO IC IE PC Tj Tstg 50 45 4.0 50 -50 300 150 -55~150 V V V mA mA mW ℃ ℃ /Electrical characteristics(Ta=25℃) Symbol Test condition.
High gain, good hFE linearity. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO VCEO VEBO IC IE PC Tj Tstg 50 45 4.0 50 -50 300 150 -55~150 V V V mA mA mW ℃ ℃ /Electrical characteristics(Ta=25℃) Symbol Test condition Rating Max Unit Min Typ VCEO ICBO IEBO hFE VCE(sat) VBE(sat) fT Cob Gpe CC.rbb′ IC=10mA VCB=50V VEB=3.0V VCE=12.5V IC=15mA IC=15mA VCE=12.5V VCB=10V VCB=10V IE=0 IB=0 IE=0 IC=0 IC=12.5mA IB=1.5mA IB=1.5mA IC=12.5mA f=30MHz 45 0.1 0.1 40 140 0.2 1.5 300 0.8 29 2.0 36 25 V μA μA V V MHz pF dB ps VCC=12.5V IE=-12.5mA f=45MHz IE=-1.0mA f=30MHz .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 3DG2222 |
LZG |
SILICON NPN TRANSISTOR | |
2 | 3DG2222A |
ETC |
NPN silicon high-frequency low-power transistors | |
3 | 3DG2222A |
LZG |
SILICON NPN TRANSISTOR | |
4 | 3DG2230 |
FOSHAN BLUE ROCKET |
(3DG2230/A) SILICON NPN TRANSISTOR | |
5 | 3DG2230 |
LZG |
SILICON NPN TRANSISTOR | |
6 | 3DG2230A |
FOSHAN BLUE ROCKET |
(3DG2230/A) SILICON NPN TRANSISTOR | |
7 | 3DG2230A |
LZG |
SILICON NPN TRANSISTOR | |
8 | 3DG2236 |
LZG |
SILICON NPN TRANSISTOR | |
9 | 3DG2060 |
LZG |
SILICON NPN TRANSISTOR | |
10 | 3DG2060 |
WEJ |
NPN Transistor | |
11 | 3DG2383 |
LZG |
SILICON NPN TRANSISTOR | |
12 | 3DG2482 |
Foshan Eming Electronics |
SILICON NPN TRANSISTOR |