JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13001B TRANSISTOR (NPN) FEATURE · power switching applications TO-92 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector -Base Voltage 600 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7.
fT tf tS Test conditions IC= 100μA , IE=0 IC= 1mA , IB=0 IE= 100μA, IC=0 VCB= 600V , IE=0 VCE= 400V, IB=0 VEB=7V, IC=0 VCE= 20V, IC= 20mA VCE= 10V, IC= 0.25 mA IC= 50mA, IB= 10 mA IC= 50 mA, IB= 10mA VCE= 20V, IC=20mA f = 1MHz IC=50mA, IB1=-IB2=5mA, VCC=45V Min 600 400 7 10 5 8 Typ Max 100 200 100 40 0.5 1.2 0.3 1.5 Unit V V V μA μA μA V V MHz μs μs CLASSIFICATION OF hFE(1) Range 10-13 13-16 16-19 19-22 22-25 25-28 28-31 31-34 34-37 37-40 B,Mar,2012 .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 3DD13001 |
GME |
High Voltage Fast Switching NPN Power Transistor | |
2 | 3DD13001 |
Jiangsu Changjiang Electronics |
TRANSISTOR | |
3 | 3DD13001 |
TRANSYS Electronics |
Plastic-Encapsulated Transistors | |
4 | 3DD13001 |
SeCoS |
NPN Transistor | |
5 | 3DD13001 |
Kexin |
NPN Transistors | |
6 | 3DD13001 |
WEJ |
NPN Transistor | |
7 | 3DD13001A |
JILIN SINO-MICROELECTRONICS |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR | |
8 | 3DD13001A1 |
Huajing Microelectronics |
Silicon NPN Transistor | |
9 | 3DD13001H |
JILIN SINO-MICROELECTRONICS |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR | |
10 | 3DD13001P1 |
Huajing Microelectronics |
NPN Transistor | |
11 | 3DD13001S |
JILIN SINO-MICROELECTRONICS |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR | |
12 | 3DD13002 |
GME |
High Voltage Fast Switching NPN Power Transistor |