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3AD53 - Inchange Semiconductor

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3AD53 Silicon PNP Power Transistor

·DC Current Gain- : hFE=20-140@IC= -4A ·Collector-Emitter Saturation Voltage- : VCE(sat)= -1.0V(Max)@ IC= -4A · APPLICATIONS ·Designed for general-purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -70 V VCEO Collector-Emitter Voltage -24 V VEBO Emitter-Base Volt.

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