3622DE - CXW

3622DE Dual N-Channel MOSFET

The uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES  RDS(ON) < m Ω @ VGS=10V RDS(ON) < mΩ @ VGS=4.5V  High Power and current handing capability  Lead free product is acquired  Surface Mount Package Application  PWM applications  L.

Features

 RDS(ON) < m Ω @ VGS=10V RDS(ON) < mΩ @ VGS=4.5V
 High Power and current handing capability
 Lead free product is acquired
 Surface Mount Package Application
 PWM applications
 Load switch
 Power management 3622DE DATASHEET PDFN3333
■ Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-source Voltage Gate-source Voltage Drain Current Pulsed Drain Current A TC=25℃ TC=100℃ Total Power Dissipation TC=25℃ TC=100℃ Single Pulse Avalanche Energy B Thermal Resistance Junction-to-Case C Junction and Storage Temperature Range VDS VGS ID IDM PD EAS RθJC TJ .