300NH02L-6 - STMicroelectronics

300NH02L-6 N-channel Power MOSFET

This device is an N-channel enhancement mode Power MOSFET produced using STMicroelectronics’ STripFET™ III technology, which is specifically designed to minimize onresistance and gate charge to provide superior switching performance. Order code STH300NH02L-6 Table 1. Device summary Marking Package 300NH02L 2 H PAK-6 Packaging Tape and reel July 2013 .

Features

TAB 1 H2PAK-6 7 Order code STH300NH02L-6 VDSS 24 V RDS(on) max. ID (1) < 1.2 mΩ 180 A 1. Current limited by package.
• Designed for automotive applications and AEC-Q101 qualified
• Conduction losses reduced
• Low profile, very low parasitic inductance, high current package Figure 1. Internal schematic diagram Applications
• Switching applications Description This device is an N-channel enhancement mode Power MOSFET produced using STMicroelectronics’ STripFET™ III technology, which is specifically designed to minimize onresistance and gate charge to provide superior switching performa.