2SK684 - Inchange Semiconductor

2SK684 N-Channel MOSFET Transistor

·Drain Current –ID=7A@ TC=25℃ ·Drain Source Voltage- : VDSS=800V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·low on–resistance ·High speed switching ·Low drive current ·No secondary breakdown ·Suitable for switchingregulator, DC–DC convertor ABSOLUTE MAXI.

Features

(ON) Drain-Source On-stage Resistance VGS= 10V; ID=4A VSD Diode Forward Voltage IF= 7A; VGS=0 IGSS Gate Source Leakage Current VGS= ±16V; VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=640V; VGS= 0 2SK684 MIN TYP. MAX UNIT 800 V 2.0 4.0 V 1.0 1.5 Ω 1.0 V ±10 uA 250 uA NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are no.