2SK4110 - Toshiba

2SK4110 Transistor

2SK4110 NMOS (π−MOSVI) 2SK4110 ○ z 。 z 。 : RDS (ON) = 0.9Ω () : IDSS = 100μA () (VDS = 600V) : mm z 。 : |Yfs| = 5.0S () z 、。 : Vth = 2.0～4.0V (VDS = 10V、ID = 1mA) (Ta = 25℃) (RGS=20kΩ) DC ( 1) VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg 600 600 ±30 6 24 40 345 6 4 150 −55～150 V V V A A W mJ A mJ ℃ ℃ ( 1) (Tc=25 ℃.

Features

V, f = 1MHz VGS = ±25V, VDS = 0V IG = ±10μA, VDS = 0V VDS = 600V, VGS = 0V ID = 10mA, VGS = 0V VDS = 10V, ID = 1mA VGS = 10V, ID = 3A VDS = 10V, ID = 3A ― ±30 ― 600 2.0 ― 1.2 ― ― ― ― ― ― ― ― ― ― ― 0.9 5.0 1050 10 110 20 40 35 130 28 16 12 ±10 ― 100 ― 4.0 1.25 ― ― ― ― ― ― ns ― ― ― ― ― nC pF μA V μA V V Ω S RL= 66 Ω (Ta = 25℃) () () ( 1) ( 1) IDR IDRP VDSF trr Qrr ― ― IDR = 6A, VGS = 0V IDR = 6A, VGS = 0V dIDR / dt = 100A /μs ― ― ― ― ― ― ― ― .