: SILICON N CHANNEL MOS TYPE (7T-MOS) AUDIO FREQUENCY POWER AMPLIFIER APPLICATION. FEATURES . High Breakdown Voltage . High Forward Transfoer Admittance . Complementary to 2SJ115 VDSS =160V lYf s |=2.0S (Typ.) Unit in mm m15.9MAX.. 03.2±O2 eQ T c! -H )- rf., 2.0 + 3 ,| + 03 I &45±Q2, .&45±Q2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Drain-Source.
. High Breakdown Voltage . High Forward Transfoer Admittance . Complementary to 2SJ115 VDSS =160V lYf s |=2.0S (Typ.) Unit in mm m15.9MAX.. 03.2±O2 eQ T c! -H )- rf., 2.0 + 3 ,| + 03 I &45±Q2, .&45±Q2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage Drain Current Power Dissipation (Tc=25°C) Channel Temperature Storage Temperature Range SYMBOL Vpss VGSS ID PD Tc h [stg_ RATING 160 ±20 UNIT 100 150 -55 -150 c5c5 +1 m UM 1. QATE 2. DRAIN (HEAT SINK) 3. SOURCE JEDEC TOSHIBA Weight : 4.6g 2-16C1B ELECTRICAL CHARACTERISTICS (Ta=25°C) CHARACTERI.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK400 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
2 | 2SK4002 |
Toshiba Semiconductor |
N-Channel MOSFET | |
3 | 2SK4003 |
Toshiba Semiconductor |
N-Channel MOSFET | |
4 | 2SK4004-01MR |
Fuji |
Power MOSFET | |
5 | 2SK4005-01MR |
Fuji Electric |
Power MOSFET | |
6 | 2SK4012 |
Toshiba Semiconductor |
N-Channel MOSFET | |
7 | 2SK4013 |
Toshiba Semiconductor |
N-Channel MOSFET | |
8 | 2SK4013 |
INCHANGE |
N-Channel MOSFET | |
9 | 2SK4014 |
Toshiba Semiconductor |
N-Channel MOSFET | |
10 | 2SK4014 |
INCHANGE |
N-Channel MOSFET | |
11 | 2SK4015 |
Toshiba Semiconductor |
N-Channel MOSFET | |
12 | 2SK4016 |
Toshiba Semiconductor |
N-Channel MOSFET |