The 2SK3812 is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER 2SK3812-ZP PACKAGE TO-263 (MP-25ZP) FEATURES • Super low on-state resistance RDS(on)1 = 2.8 mΩ MAX. (VGS = 10 V, ID = 55 A) RDS(on)2 = 3.7 mΩ MAX. (VGS = 4.5 V, ID = 55 A) • High current rating: ID(DC) = ±110 A ABSOLUTE M.
• Super low on-state resistance RDS(on)1 = 2.8 mΩ MAX. (VGS = 10 V, ID = 55 A) RDS(on)2 = 3.7 mΩ MAX. (VGS = 4.5 V, ID = 55 A)
• High current rating: ID(DC) = ±110 A
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse)
Note1
(TO-263) 60 ±20 ±110 ±440 213 1.5 150 −55 to +150 397 63 397 V V A A W W °C °C mJ A mJ
VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg
Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Single Avalanche Ene.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK381 |
ETC |
Transistor | |
2 | 2SK3811 |
NEC |
SWITCHING N-CHANNEL POWER MOSFET | |
3 | 2SK3811-ZP |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
4 | 2SK3812-ZP |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
5 | 2SK3813 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
6 | 2SK3813 |
NEC |
SWITCHING N-CHANNEL POWER MOSFET | |
7 | 2SK3813-Z |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
8 | 2SK3814 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
9 | 2SK3814 |
NEC |
SWITCHING N-CHANNEL POWER MOSFET | |
10 | 2SK3814-Z |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
11 | 2SK3815 |
Sanyo Semicon Device |
N-Channel MOSFET | |
12 | 2SK3815L |
Inchange Semiconductor |
N-Channel MOSFET Transistor |