2SK369 - Toshiba Semiconductor

2SK369 N-Channel MOSFET

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK369 2SK369 For Low Noise Audio Amplifier Applications Unit: mm · Suitable for use as first stage for equalizer and MC head amplifiers. · High |Yfs|: |Yfs| = 40 mS (typ.) (VDS = 10 V, VGS = 0, IDSS = 5 mA) · High breakdown voltage: VGDS = −40 V (min) · Super low noise: NF = 1.0dB (typ.) (V.

Features

rse transfer capacitance Noise figure (Note 2) IGSS VGS = -30 V, VDS = 0 V (BR) GDS VDS = 0, IG = -100 mA IDSS VDS = 10 V, VGS = 0 (Note 1) VGS (OFF) VDS = 10 V, ID = 0.1 mA ïYfsï VDS = 10 V, VGS = 0, f = 1 kHz, (IDSS = 5 mA) Ciss VDS = 10 V, VGS = 0, f = 1 MHz Crss NF (1) VGD = -10 V, ID = 0, f = 1 MHz VDS = 10 V, RG = 100 W, ID = 5 mA, f = 100 Hz NF (2) VDS = 10 V, RG = 100 W, ID = 5 mA, f = 1 kHz ¾ ¾ -1.0 nA -40 ¾ ¾ V 5.0 ¾ 30 mA -0.3 ¾ -1.2 V 25 40 ¾ mS ¾ 75 ¾ pF ¾ 15 ¾ pF ¾ 5 10 dB ¾1 2 Note 1: IDSS classification GR: 5.0~10.0 mA, BL: 8.0~16.0 mA, V: 14.0~30.0.