2SK3669 - Toshiba Semiconductor

2SK3669 N-Channel MOSFET

2SK3669 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS VII) 2SK3669 Switching Regulator, Audio Amplifier and Motor Drive Applications • • • Low drain-source ON-resistance: RDS (ON) = 95 mΩ (typ.) High forward transfer admittance: |Yfs| = 6 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 100 V) Unit: mm • Enhancement mode : Vth =.

Features

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). .