2SK364 - Toshiba Semiconductor

2SK364 N-Channel MOSFET

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK364 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications 2SK364 Unit: mm · High breakdown voltage: VGDS = −40 V · High input impedance: IGSS = −1.0 nA (max) (VGS = −30 V) · Low RDS (ON): RDS (ON) = 50 Ω (typ.) (IDSS = 5 mA) · Complementary to 2SJ104 Max.

Features

100 mA ¾ ¾ -1.0 nA -40 ¾ ¾ V IDSS VDS = 10 V, VGS = 0 (Note 1) 2.6 ¾ 20 mA VGS (OFF) VDS = 10 V, ID = 0.1 mA -0.2 ¾ -1.5 V ïYfsï VDS = 10 V, VGS = 0, f = 1 kHz (Note 2) 12 28 ¾ mS Ciss VDS = 10 V, VGS = 0, f = 1 MHz ¾ 30 ¾ pF Crss VDG = 10 V, ID = 0, f = 1 MHz ¾ 6 ¾ pF RDS (ON) VDS = 10 mV, VGS = 0 (Note 2) ¾ 50 ¾ W Note 1: IDSS classification GR: 2.6~6.5 mA, BL: 6~12 mA, V: 10~20 mA Note 2: Condition of the typical value IDSS = 5 mA 1 2003-03-25 2SK364 2 2003-03-25 2SK364 3 2003-03-25 2SK364 4 2003-03-25 2SK364 RESTRICTIONS ON PRODUCT USE 000707EAA
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