www.DataSheet4U.com Ordering number : ENN7169 2SK3557 N-Channel Junction Silicon FET 2SK3557 Low-Noise HF Amplifier Applications Preliminary Applications • • Package Dimensions unit : mm 2050A [2SK3557] AM tuner RF amplifier. Low noise amplifier. Features 0.5 • • • • Large yfs. Small Ciss. Ultrasmall-sized package permitting 2SK3557applied sets to .
0.5
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Large yfs. Small Ciss. Ultrasmall-sized package permitting 2SK3557applied sets to be made smaller and slimer. Ultralow noise figure.
0.4 3
0.16 0 to 0.1
1 0.95 0.95 2 1.9 2.9
0.5
1.5 2.5 0.8 1.1
1 : Source 2 : Drain 3 : Gate SANYO : CP
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VDSX VGDS IG ID PD Tj Tstg Conditions Ratings 15 -15 10 50 200 150 --55 to +150 Unit V V mA mA mW °C °C
Electrical Characteristics.
N-Channel JFET 15 V, 10 to 32 mA, 35 mS, CP 2SK3557 Applications • AM Tuner RF Amplification • Low Noise Amplifier Fe.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK355 |
Toshiba |
N-Channel Transistor | |
2 | 2SK3550-01R |
Fuji Electric |
Power MOSFET | |
3 | 2SK3550-01R |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
4 | 2SK3554-01 |
Fuji Electric |
N-Channel MOSFET | |
5 | 2SK3554-01 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
6 | 2SK3555-01MR |
Fuji Electric |
N-CHANNEL SILICON POWER MOSFET | |
7 | 2SK3555-01MR |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
8 | 2SK3556-01L |
Fuji Electric |
N-CHANNEL SILICON POWER MOSFET | |
9 | 2SK3556-01L |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
10 | 2SK3556-01S |
Fuji Electric |
N-CHANNEL SILICON POWER MOSFET | |
11 | 2SK3556-01S |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
12 | 2SK3556-01SJ |
Fuji Electric |
N-CHANNEL SILICON POWER MOSFET |