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The 2SK3511 is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER 2SK3511 2SK3511-S PACKAGE TO-220AB TO-262 TO-263 TO-220SMD Note FEATURES • Super low on-state resistance: RDS(on) = 12.5 mΩ MAX. (VGS = 10 V, ID = 42 A) • Low Ciss: Ciss = 5900 pF TYP. • Built-in gate protection diode 2SK.
• Super low on-state resistance: RDS(on) = 12.5 mΩ MAX. (VGS = 10 V, ID = 42 A)
• Low Ciss: Ciss = 5900 pF TYP.
• Built-in gate protection diode
2SK3511-ZJ 2SK3511-Z
Note TO-220SMD package is produced only in Japan. (TO-220AB)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse)
Note1
VDSS VGSS ID(DC) ID(pulse) PT PT Tch Tstg
75 ±20 ±83 ±260 100 1.5 150
–55 to +150 52 250
V V A A W W °C °C A mJ (TO-262)
Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channe.
2SK3511 - Kexin
SMD Type MOSFET MOS Field Effect Transistor 2SK3511 TO-263 +0.1 1.27-0.1 Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Featur.
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|---|---|---|---|---|
| 1 | 2SK351 |
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| 2 | 2SK351 |
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| 3 | 2SK3510 |
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| 4 | 2SK3512-01L |
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| 5 | 2SK3512-S |
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| 7 | 2SK3513-01L |
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| 8 | 2SK3513-01S |
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| 9 | 2SK3513-01SJ |
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