2SK3461-S-VB 2SK3461-S-VB Datasheet N-Channel 60 V (D-S) 175 °C MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) Configuration 60 0.0050 0.0120 97 Single FEATURES • TrenchFET® Power MOSFET • Package with Low Thermal Resistance • 100 % Rg and UIS Tested TO-252 GDS Top View D G S N-Channel MOSFET .
• TrenchFET® Power MOSFET
• Package with Low Thermal Resistance
• 100 % Rg and UIS Tested
TO-252
GDS Top View
D
G S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
TC = 25 °C
TC = 125 °C
ID
Continuous Source Current (Diode Conduction)a
IS
Pulsed Drain Currentb
IDM
Single Pulse Avalanche Current Single Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
Maximum Power Dissipationb
TC = 25 °C TC = 125 °C
PD
Operating Junction and Storage Temperature Range
TJ, T.
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