2SK2975 - Mitsubishi Electric Semiconductor

2SK2975 RF POWER MOS FET

2SK2975 is a MOS FET type transistor specifically designed for VHF/UHF power amplifiers applications. OUTLINE DRAWING INDEX MARK (TOP) Dimensions in mm (BOTTOM) FEATURES • High power gain:Gpe≥8.4dB @VDD=9.6V,f=450MHz,Pin=30dBm • High efficiency:55% typ. • Source case type seramic package (connected internally to source) 3 4.9 1 2 2.0 3.50 t=1.2MAX .

Features

• High power gain:Gpe≥8.4dB @VDD=9.6V,f=450MHz,Pin=30dBm
• High efficiency:55% typ.
• Source case type seramic package (connected internally to source) 3 4.9 1 2 2.0 3.50 t=1.2MAX APPLICATION For drive stage and output stage of power amplifiers in VHF/UHF band portable radio sets. 1 : DRAIN 2 : SOURCE 3 : GATE MARKING INDEX MARK TYPE No. LOT No. ABSOLUTE MAXIMUM RATINGS (TC=25˚C, unless otherwise noted) Symbol VDSS VGSS Pch Tj Tstg Parameter Drain to source voltage Gate to source voltage Channel dissipation Junction temperature Storage temperature Conditions Ratings 30 ±20 10 175 -40 .