2SK2569 - Renesas

2SK2569 Silicon N-Channel MOSFET

2SK2569 Silicon N Channel MOS FET REJ03G1018-0300 Rev.3.00 Dec 27, 2006 Application High speed power switching Features • • • • Low on-resistance. RDS(on) = 2.6 Ω max. (at VGS = 4 V, ID = 100 mA) 2.5 V gate drive device. Small package (MPAK). Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) D 3 1 2 G 1. Source 2. Gate 3. Drain S Note: Ma.

Features

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• Low on-resistance. RDS(on) = 2.6 Ω max. (at VGS = 4 V, ID = 100 mA) 2.5 V gate drive device. Small package (MPAK). Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) D 3 1 2 G 1. Source 2. Gate 3. Drain S Note: Marking is "ZN
  –" Rev.3.00 Dec 27, 2006 page 1 of 6 Free Datasheet http://www.datasheet4u.com/ 2SK2569 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Channel dissipation Channel temperature Storage temperature Note: 1. PW ≤ 10 µs, duty cycle ≤ 1 % Symbol VDSS VGSS ID ID(pulse)
*1 Pch
*2 .