Ordering number:ENN5075 N-Channel Junction Silicon FET 2SK2539 High-Frequency Amplifier, Analog Switch Applications Features · Large | yfs |. · Small Ciss. · Small-sized package permitting 2SK2539-applied sets to be made small and slim. · Adoption of FBET process. Package Dimensions unit:mm 2050A [2SK2539] 0.4 3 0.16 0 to 0.1 1.5 0.5 2.5 1 0.95 0.95 2.
· Large | yfs |.
· Small Ciss.
· Small-sized package permitting 2SK2539-applied
sets to be made small and slim.
· Adoption of FBET process.
Package Dimensions
unit:mm 2050A
[2SK2539]
0.4 3
0.16 0 to 0.1
1.5 0.5 2.5
1 0.95 0.95 2 1.9 2.9
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature
Symbol
VDSX VGDS
IG ID PD Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
Parameter
Symbol
Conditions
Gate-to-Drain Breakdown Voltag.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK2530 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET | |
2 | 2SK2531 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET | |
3 | 2SK2532 |
Sanyo |
N-Channel Silicon MOSFET | |
4 | 2SK2533 |
Sanyo Semicon Device |
Silicon N-Channel MOSFET | |
5 | 2SK2534 |
Sanyo |
N-Channel Silicon MOSFET | |
6 | 2SK2538 |
Panasonic Semiconductor |
Silicon N-Channel MOSFET | |
7 | 2SK2503 |
Rohm |
Small switching Transistors | |
8 | 2SK2503 |
Guangdong Kexin Industrial |
Silicon N-Channel MOSFET | |
9 | 2SK2503 |
TY Semiconductor |
Transistor | |
10 | 2SK2504 |
Rohm |
Small switching Transistors | |
11 | 2SK2504 |
Guangdong Kexin Industrial |
Silicon N-Channel MOSFET | |
12 | 2SK2504 |
TY Semiconductor |
Transistor |