2SK1824-VB 2SK1824-VB Datasheet N-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.270 at VGS = 4.5 V 20 0.390 at VGS = 2.5 V ID (A) c 0.85 0.70 Qg (TYP.) 1.4 nC D SC-75 G1 G 3D FEATURES • TrenchFET® power MOSFET • 100 % Rg tested APPLICATIONS • Smart phones, tablet PC’s - DC/DC converters - Boost converters - Load switch, OVP switc.
• TrenchFET® power MOSFET
• 100 % Rg tested
APPLICATIONS
• Smart phones, tablet PC’s
- DC/DC converters - Boost converters
- Load switch, OVP switch
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ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current (t = 300 μs) Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)
TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C
TC = 25 °C TA = 25.
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1824 N-CHANNEL MOS FET FOR SWITCHING The 2SK1824 is a N-channel vertical ty.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK182 |
Yoshino International |
(2SK180 - 2SK183) Power FET | |
2 | 2SK1821 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
3 | 2SK1821-01M |
Fuji Electric |
N-channel MOS-FET | |
4 | 2SK1821-01MR |
Fuji Electric |
N-channel MOS-FET | |
5 | 2SK1822-01M |
Fuji Electric |
N-channel MOS-FET | |
6 | 2SK1823-01R |
Fuji Electric |
N-CHANNEL SILICON POWER MOSFET | |
7 | 2SK1825 |
Toshiba Semiconductor |
N-Channel MOSFET | |
8 | 2SK1826 |
Toshiba Semiconductor |
N-Channel MOSFET | |
9 | 2SK1827 |
Toshiba Semiconductor |
N-Channel MOSFET | |
10 | 2SK1828 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
11 | 2SK1828 |
Kexin |
N-Channel MOSFET | |
12 | 2SK1829 |
Toshiba Semiconductor |
N-Channel MOSFET |