2SK1622(L), 2SK1622(S) Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline November 1996 LDPAK 4 4 123 D 12 3 G S 1. Gate 2. .
• Low on-resistance
• High speed switching
• Low drive current
• 4 V gate drive device
Can be driven from 5 V source
• Suitable for motor drive, DC-DC converter, power switch and solenoid drive
Outline
November 1996
LDPAK
4
4
123 D
12 3
G S
1. Gate 2. Drain 3. Source 4. Drain
2SK1622(L), 2SK1622(S)
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW≤10 µs, duty cycle ≤ 1%
2. Value at TC = 25°C
Symbo.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK1620 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
2 | 2SK1620 |
Renesas |
Silicon N-Channel MOS FET | |
3 | 2SK1620L |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
4 | 2SK1620L |
Renesas |
Silicon N-Channel MOS FET | |
5 | 2SK1620S |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
6 | 2SK1620S |
Renesas |
Silicon N-Channel MOS FET | |
7 | 2SK1622L |
Hitachi Semiconductor |
Silicon N-Channel MOS FET | |
8 | 2SK1622S |
Hitachi Semiconductor |
Silicon N-Channel MOS FET | |
9 | 2SK1623 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
10 | 2SK1623L |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
11 | 2SK1623L |
INCHANGE |
N-Channel MOSFET | |
12 | 2SK1623S |
Hitachi Semiconductor |
Silicon N-Channel MOSFET |