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2SK1567 - Hitachi Semiconductor

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2SK1567 Silicon N-Channel MOSFET

2SK1566, 2SK1567 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-220FM D G 1 2 3 1. Gate 2. Drain 3. Source S 2SK1566, 2SK1567 Absolute Maximum Ratings (Ta = 25°C) Item D.

Features






• Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-220FM D G 1 2 3 1. Gate 2. Drain 3. Source S 2SK1566, 2SK1567 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1566 2SK1567 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C VGSS ID I D(pulse)
* I DR Pch
* Tch Tstg 2 1 Symbol VDSS Ratings 450 500 ±30 7.

The same part from a different manufacturer

Datasheet 2SK1567 - VBsemi 2SK1567

2SK1567-VB 2SK1567-VB Datasheet N-Channel 650V (D-S) Power MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) at TJ max. R.

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