2SK1548 - Inchange Semiconductor

2SK1548 N-Channel MOSFET Transistor

·Drain Current –ID=3.5A@ TC=25℃ ·Drain Source Voltage- : VDSS=900 (Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VDSS Drain-Source Voltage (VGS=0) VALUE UNI T 900 V VGS Gate-Source Voltage .

Features

mA MIN TYP MAX UNIT 900 V VGS(th) Gate Threshold Voltage VDS=0; ID=1mA RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=2A IGSS Gate Source Leakage Current VGS= ±30V;VDS= 0 2.5 3.5 5.0 V 4.0 5.5 Ω ±100 nA IDSS Zero Gate Voltage Drain Current VDS=900V; VGS= 0 500 uA tr Rise time 65 100 ns ton Turn-on time tf Fall time VGS=10V;ID=3.5A;RL=25Ω 95 145 ns 60 90 ns toff Turn-off time 110 255 ns NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presente.