2SK1530 - Toshiba Semiconductor

2SK1530 Silicon N-Channel MOSFET

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1530 2SK1530 High-Power Amplifier Application High breakdown voltage High forward transfer admittance Complementary to 2SJ201 : VDSS = 200V : |Yfs| = 5.0 S (typ.) Maximum Ratings (Ta = 25°C) Characteristics Drain−source voltage Gate−source voltage Drain current (Note 1) Drain power diss.

Features

ut capacitance Reverse transfer capacitance IDSS IGSS V (BR) DSS VDS (ON) VGS (OFF) |Yfs| Ciss Coss Crss VDS = 200 V, VGS = 0 VDS = 0V, VGS = ±20 V ID = 10 mA, VGS = 0 ID = 8 A, VGS = 10 V VDS = 10 V, ID = 0.1 A VDS = 10 V, ID = 5 A VDS = 30 V, VGS = 0, f = 1 MHz VDS = 30 V, VGS = 0, f = 1 MHz VDD = 30 V, VGS = 0, f = 1 MHz Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VGS (OFF) Classification 0: 0.8~1.6 This transistor is an electrostatic-sensitive device. Please handle with caution. Y: 1.4~2.8 1 Min Typ. Max Unit — — 1.0 mA — — ±0.5 µA 200 — — V — .