2SK1507 - Inchange Semiconductor

2SK1507 N-Channel MOSFET Transistor

·Drain Current –ID=9A@ TC=25℃ ·Drain Source Voltage- : VDSS=600 (Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers. ABSOLUTE MAXIMUM RATINGS(Ta.

Features

On-stage Resistance VGS=10V; ID=5A IGSS Gate Source Leakage Current VGS= ±30V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=600V; VGS= 0 VSD Diode Forward Voltage IF=9A; VGS=0 tr Rise time ton Turn-on time tf Fall time VGS=10V;ID=9A;RL=25Ω toff Turn-off time 2SK1507 MIN TYP MAX UNIT 600 V 2.5 3.5 5.0 V 0.85 1.0 Ω ±100 nA 500 uA 1.1 1.5 V 30 45 ns 80 120 ns 80 120 ns 160 240 ns Notice： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as .